| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of high-power light emission.SOLUTION: The nitride semiconductor light-emitting element includes a laminated structure in which an n-type layer 20, an active layer 30 having a well layer and a barrier layer, a p-type cladding layer 50, and a p-type contact layer 51 are laminated in this order and has an emission wavelength of 200-350 nm. The thickness of the well layer is 4-20 nm. The barrier layer is represented by compositional formula AlGaN (0.02≤a≤0.89). The p-type cladding layer is represented by compositional formula AlGaN (0.12<b≤1.00). The difference (b-a) between the Al composition of the p-type cladding layer and the Al composition of the barrier layer is greater than 0.10 but not greater than 0.45. |
