| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes a fin type active pattern protruding above a device isolation layer, a gate electrode on the device isolation layer and intersecting the fin type active pattern, an elevated source/drain on the fin type active pattern at both sides of the gate electrode, and a fin spacer on a side wall of the fin type active pattern, the fin spacer having a low dielectric constant and being between the device isolation layer and the elevated source/drain. |
| 申请公布号 |
US2014374827(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414259212 |
申请日期 |
2014.04.23 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
SUH Dong-Chan;KOH Chung-Geun;JEONG Seong-Hoon;LEE Kwan-Heum;RHEE Hwa-Sung;KIM Gyeom |
| 分类号 |
H01L29/78;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a fin type active pattern protruding above a device isolation layer; a gate electrode on the device isolation layer and intersecting the fin type active pattern; an elevated source/drain on the fin type active pattern at both sides of the gate electrode; and a fin spacer on a side wall of the fin type active pattern, the fin spacer having a low dielectric constant and being between the device isolation layer and the elevated source/drain. |
| 地址 |
Suwon-si KR |
