| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device with a layout having higher flexibility; and provide a manufacturing method of the semiconductor device.SOLUTION: The semiconductor device comprises: a plurality of p-type wells PW and a plurality of n-type wells NW alternately arranged along an X-axis direction and adjacent to each other in a first part AR1; a common power supply region (ARP2) for the plurality of PWs, which is arranged on one of sides sandwiching the AR1 in a Y-axis direction; and a common power supply region (ARN2) for the plurality of NWs, which is arranged on the other side. For example, in the power supply region (ARP2) for the PWs, ptype power supply diffusion layer P+(DFW) having a shape elongated in the X-axis direction is formed. In the AR1, a plurality of gate layers GT which extend in the X-axis direction across boundaries of the PWs, NWs are arranged, and with this configuration, a plurality of MIS transistors are formed.</p> |
