发明名称 |
Semiconductor base material and method of manufacturing the material |
摘要 |
<p>As shown in Fig. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in Fig. 1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in Fig. 1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality. <IMAGE></p> |
申请公布号 |
EP1947684(B1) |
申请公布日期 |
2014.12.24 |
申请号 |
EP20080004987 |
申请日期 |
2001.09.17 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
OKAGAWA, HIROAKI;TADATOMO, KAZUYUKI;OUCHI, YOICHIRO;TSUNEKAWA, TAKASHI |
分类号 |
H01L21/205;C30B25/02;C30B25/18;C30B29/38;C30B29/40;H01L21/02;H01L21/20;H01L33/22;H01L33/32;H01S5/323 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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