发明名称 半導体記憶装置、および、ビット線の充電方法
摘要 PROBLEM TO BE SOLVED: To reduce power consumed by a return operation by appropriately setting a charging time of a bit line during returning from a low power consumption mode to a normal operation mode. SOLUTION: A semiconductor storage device 10 has a charge circuit 4 for respectively charging a plurality of bit lines 2a, 2b, ..., a ring oscillator 5 in which a dummy bit line 3 is used for wiring of a feedback path 5a, a counter 6 for outputting a detection signal when the number of oscillating times of the ring oscillator 5 reaches the predetermined number of times set on the basis of the number of the plurality of bit lines 2a, 2b, ..., and a control circuit 7 for making the charge circuit 4 start to charge the plurality of bit lines 2a, 2b, ... in response to a return signal instructing to return from the low power consumption mode to the normal operation mode, also making the ring oscillator 5 start oscillation, and making the charge circuit 4 finish charging the plurality of bit lines 2a, 2b, ... in response to a detection signal outputted from the counter 6. COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5644717(B2) 申请公布日期 2014.12.24
申请号 JP20110180646 申请日期 2011.08.22
申请人 发明人
分类号 G11C11/413 主分类号 G11C11/413
代理机构 代理人
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