| 摘要 |
The invention relates to a method for transferring a buried layer of circuits (2). Said method is characterised in that it includes the following steps which involve: taking a donor substrate (1, 1') including on the inside an area (7, 7') for halting the etching and covered on one of the surfaces (12) thereof, referred to as "front", with a layer of circuits (2); providing either a peripheral groove (3) that extends away from the side edge (13) of said donor substrate (1, 1') or a peripheral clipping (3') on the entire circumference of said substrate, on the side of the surface thereof covered with the layer of circuits (2), said clipping (3') or said groove (3) being provided deep enough to pass entirely through the layer of circuits (2) and extending into the donor substrate (1, 1'); depositing, on the exposed surface (21) of said layer of circuits (2) and on the clipped surface (13') or on the walls of said groove (3), a layer of a material (4) for selectively halting the etching of said layer of circuits (2), referred to as the "second halting layer", without blocking said groove (3); adhering a receiving substrate (5) to said donor substrate (1, 1') on the side covered by said second halting layer (4); reducing the thickness of the donor substrate (1) by chemical etching of the rear surface thereof (11), until reaching said area (7, 7') for halting the etching, such as to obtain the transfer of said buried layer of circuits (2) to said receiving substrate (5). |
