| 摘要 |
Provided is a laminated thin-film transistor exhibiting excellent photostability, wherein the hump effect in Vg-Id characteristics is inhibited. This thin-film transistor has an oxide semiconductor layer containing: a first region (A1) having a composition represented by In(a)Ga(b)Zn(c)O(d) (wherein a>0, b>=0, c>0, d>0, and a+b+c=1) in which b<=91a/74-17/40; and a second region (A2) which is disposed farther away from the gate electrode than the first region and has a composition that is different from the first region and is represented by In(e)Ga(f)Zn(g)O(h) (wherein e>0, f>0, g>0, h>0, and e+f+g=1) in which f/(e+f)>=0.80. |
