| 摘要 |
<p>An embodiment of the present invention relates to a light-emitting device, a method for manufacturing the same, a light-emitting device package, and a lighting system. According to an embodiment of the present invention, the light-emitting device comprises: a first electrode layer (87); a second conductive semiconductor layer (13) formed on the first electrode layer (87); an active layer (12) formed on the second conductive semiconductor layer (13); a first conductive semiconductor layer (11) formed on the active layer (12); an Al_(y)Ga_(1-y)N layer (wherein 0 < y <= 1) (16) formed on the first conductive semiconductor layer (11); an In_(x)Ga_(1-x)N pattern (wherein 0 < x <= 1) (15) formed on the Al_(y)Ga_(1-y)N layer (16); a gallium nitride semiconductor layer (14) formed on the In_(x)Ga_(1-x)N pattern (15); and a pad electrode formed on the gallium nitride semiconductor layer (14).</p> |
