METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFERS

摘要

The present invention provides a method for manufacturing a silicon epitaxial wafer, characterized in that a silicon epitaxial layer is formed on an N-type silicon single crystal wafer manufactured by doping with arsenic to set a resistivity to 1.0 to 1.7 m©cm and further doping with carbon, nitrogen, or both carbon and nitrogen. As a result, there can be provided the method for manufacturing a silicon epitaxial wafer that can suppress occurrence of stacking faults at the time of performing epitaxial growth on the arsenic-doped super-low resistance silicon single crystal wafer.