PRODUCTION METHOD OF NITRIDE SEMICONDUCTOR THIN FILM AND PRODUCTION METHOD OF NITRIDE SEMICONDUCTOR DEVICE USING THE SAME

摘要

According to an aspect of the present invention, provided is a method of manufacturing a nitride semiconductor thin film which includes a step of preparing a first nitride single crystal layer doped with an n-type impurity, a step of forming etch pits on the surface of the first nitride single crystal layer by using an etch gas, and a step of growing a second nitride single crystal layer on the first nitride single crystal having the etch pits.