| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel junction element capable of implanting a carrier with a high spin polarization rate into a semiconductor layer exposed to air even if a tunnel insulation film is formed on a surface of the semiconductor layer. SOLUTION: A manufacturing method of a tunnel junction element comprises: a step of exposing a surface of a semiconductor layer 10 to air; a step of exposing the surface of the semiconductor layer 10 to a reducing gas; a step of forming a tunnel insulation film 12 on the surface of the semiconductor layer 10 without exposing the surface of the semiconductor layer 10 to the air after the step of exposing the surface to the reducing gas; and a step of forming a ferromagnetic layer 14 on the tunnel insulation film 12. COPYRIGHT: (C)2012,JPO&INPIT |
