| 摘要 |
Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (130), an AlGaInP-based active layer (140) on the first conductive semiconductor layer (130), a second conductive clad layer (150) on the AlGaInP-based active layer (140), a second conductive GaP layer (162) having first concentration on the second conductive clad layer (150), and a second conductive GaP layer (164) having second concentration higher than the first concentration on the second conductive GaP layer (162) having the first concentration. |
