发明名称 |
Semiconductor device and method for fabricating a semiconductor device |
摘要 |
A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. The two semiconductor materials are arranged adjacent one another in a common plane. |
申请公布号 |
US8916909(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201213413315 |
申请日期 |
2012.03.06 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Hirler Franz;Meiser Andreas |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. A semiconductor device, comprising:
a body comprising: a first portion comprising a first semiconductor material having a first bandgap; a second portion comprising a second semiconductor material having a second bandgap, the second bandgap being different from the first bandap; and the first portion and the second portion being coplanar and dielectrically insulated from one another; and wherein the body is disposed on a substrate with the first and second portions being laterally adjacent to one another on the substrate, wherein the substrate includes a first region and a second region laterally adjacent to one another, the first region below the first portion and comprising a first substrate material, and the second region below the second portion and comprising a second substrate material which is different from the first substrate material. |
地址 |
Villach AT |