发明名称 Semiconductor device and method for fabricating a semiconductor device
摘要 A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. The two semiconductor materials are arranged adjacent one another in a common plane.
申请公布号 US8916909(B2) 申请公布日期 2014.12.23
申请号 US201213413315 申请日期 2012.03.06
申请人 Infineon Technologies Austria AG 发明人 Hirler Franz;Meiser Andreas
分类号 H01L29/739 主分类号 H01L29/739
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. A semiconductor device, comprising: a body comprising: a first portion comprising a first semiconductor material having a first bandgap; a second portion comprising a second semiconductor material having a second bandgap, the second bandgap being different from the first bandap; and the first portion and the second portion being coplanar and dielectrically insulated from one another; and wherein the body is disposed on a substrate with the first and second portions being laterally adjacent to one another on the substrate, wherein the substrate includes a first region and a second region laterally adjacent to one another, the first region below the first portion and comprising a first substrate material, and the second region below the second portion and comprising a second substrate material which is different from the first substrate material.
地址 Villach AT