发明名称 |
Wafer level LED package and method of fabricating the same |
摘要 |
Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. |
申请公布号 |
US8916898(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201314074098 |
申请日期 |
2013.11.07 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Suh Daewoong;Lee Chung Hoon |
分类号 |
H01L33/44;H01L33/62;H01L33/20;H01L33/48;H01L33/50 |
主分类号 |
H01L33/44 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A light emitting diode (LED) package, comprising:
a first substrate; a semiconductor stack disposed on a front surface of the first substrate, the semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; a second substrate comprising a first lead electrode and a second lead electrode; a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes; and a wavelength converter covering a rear surface of the first substrate. |
地址 |
Ansan-si KR |