发明名称 Wafer level LED package and method of fabricating the same
摘要 Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.
申请公布号 US8916898(B2) 申请公布日期 2014.12.23
申请号 US201314074098 申请日期 2013.11.07
申请人 Seoul Viosys Co., Ltd. 发明人 Suh Daewoong;Lee Chung Hoon
分类号 H01L33/44;H01L33/62;H01L33/20;H01L33/48;H01L33/50 主分类号 H01L33/44
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A light emitting diode (LED) package, comprising: a first substrate; a semiconductor stack disposed on a front surface of the first substrate, the semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; a second substrate comprising a first lead electrode and a second lead electrode; a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes; and a wavelength converter covering a rear surface of the first substrate.
地址 Ansan-si KR