Method of operating PSRAM and related memory device

摘要

The latency of a PSRAM is set according to its current state when receiving an external command. If the PSRAM is not executing a specific operation or has completed the specific operation while meeting corresponding timing parameters, the PSRAM is configured to execute the external command with a first latency. If the PSRAM is executing the specific operation or has completed the specific operation before meeting corresponding timing parameters, the PSRAM is configured to execute the external command with a second latency larger than the first latency.

主权项

1. A method of operating a pseudo-static random access memory (PSRAM), comprising:
determining a current state of the PSRAM when receiving an external command; executing the external command with a first latency if the current state is a first state, wherein when the current state is the first state, the PSRAM is not executing a specific operation, or has completed the specific operation and met a corresponding timing parameter; and executing the external command with a second latency larger than the first latency if the current state is a second state or a third state, wherein when the current state is the second state, the PSRAM is executing the specific operation, or has completed the specific operation but before meeting the corresponding timing parameter; wherein when the current state is the third state, the PSRAM is executing the specific operation, or is required to execute a self-refresh operation according to an internal refresh signal after having completed the specific operation but before meeting the corresponding timing parameter.