Remote plasma radical treatment of silicon oxide

摘要

Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, the method includes generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator, flowing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where a semiconductor device is disposed, wherein the semiconductor device has a substrate comprising an oxide layer formed thereon, exposing an exposed surface of the oxide layer to the nitrogen-containing radicals, and incorporating nitrogen in the exposed surface of the oxide layer of the substrate.

主权项

1. A method for processing a semiconductor device in a processing chamber, comprising:
generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator; eliminating majority of the ions from the plasma before introducing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where the semiconductor device is disposed, wherein the semiconductor device comprises a substrate having an oxide layer formed thereon, wherein eliminating majority of the ions from the plasma comprises flowing the plasma into a delivery member disposed in fluid communication with the processing region through an inlet port, the inlet port is formed in a sidewall of the processing chamber and a longitudinal axis of the delivery member is at an angle is about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port; exposing an exposed surface of the oxide layer to the nitrogen-containing radicals; and incorporating nitrogen in the exposed surface of the oxide layer of the substrate.