发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
摘要 An object of the present invention is to maintain a process uniformity in a substrate surface in a process for performing a temperature control of a substrate by using a gas for electrical heating. The method of processing a substrate includes: controlling a pressure in a processing container to a pressure of P0, which is a vacuum state; introducing a pressure controlling gas into the processing container (1) to control the pressure inside the processing container (1) to a pressure of P1, which is higher than P0, while a substrate (s) is spaced apart from an upper surface of a mount (5) by a lifter pin (85); loading the substrate on the mount (5) by lowering the lifter pin (85); exhausting the pressure controlling gas in the processing container (1); and introducing a processing gas into the treatment container and processing the substrate (S) while maintaining a pressure of an electrical heating space to P2.
申请公布号 KR20140144647(A) 申请公布日期 2014.12.19
申请号 KR20140065599 申请日期 2014.05.30
申请人 TOKYO ELECTRON LIMITED 发明人 FUJINAGA MOTOKI
分类号 H01L21/3065;H01L21/02;H01L21/324 主分类号 H01L21/3065
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