UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS

摘要

Provided is a photoresist underlayer film material used in lithography, wherein the underlayer film material is characterized by containing a novolak resin having a repeat unit of substituted or unsubstituted fluorescein. The resist underlayer film material of the present invention is delaminated with alkaline water. The novolak resin, which has a repeat unit of naphtholphthalein fluorescein, is hydrolyzed with alkaline water to generate a carboxylic group, and then can be dissolved in an alkaline solution. Therefore, delamination is possible without any damage to a SiO_2 substrate or Si substrate to which an ion is injected.