发明名称 IN-SITU HARDMASK GENERATION
摘要 In some examples, a process to generate an in-situ hardmask layer on porous dielectric materials using the densifying action of a plasma in conjunction with a sacrificial polymeric filler, the latter which enables control of the hardmask thickness as well as a well-defined interface with the underlying ILD.
申请公布号 US2014367356(A1) 申请公布日期 2014.12.18
申请号 US201313919725 申请日期 2013.06.17
申请人 International Business Machines Corporation 发明人 Dubois Geraud Jean-Michel;Frot Theo J.;Magbitang Teddie P.;Volksen Willi
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method comprising: providing a structure comprising a layer overlying a substrate, wherein the layer comprises a silica-like dielectric material having a plurality of pores; at least partially filling a top portion of the layer with a filling material; exposing the top portion of the layer to a plasma such that: (i) the top portion of the layer, which faces the plasma, becomes a dense non-porous silicon-containing layer, the plasma consuming all the filling material in the top portion, so that no subsequent burn-out of the filling material in the top portion is required, (ii) the bottom portion of the layer, adjacent to the top portion, remains substantially unaffected by the plasma, and (iii) a modified structure results that includes the dense non-porous layer, the bottom portion, and the substrate; after forming the dense non-porous layer, performing at least one process on the modified structure; andafter performing the at least one process, removing all or a portion of the dense non-porous layer.
地址 Armonk NY US