发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device includes a photolithography process having steps of a developing solution immersing process. The steps of the developing solution immersing process includes step (a) of dropping a developing solution on a silicon carbide semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 μm and step (b) of reducing the film thickness of the developing solution film to 6 μm or less. |
申请公布号 |
US2014370445(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414242057 |
申请日期 |
2014.04.01 |
申请人 |
Mitsubishi Electric Corporation |
发明人 |
AYA Sunao;SHIKAMA Shozo;YUKI Hideaki |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor device, comprising a photolithography process, wherein said photolithography process includes a developing solution immersing process, and
said developing solution immersing process includes the steps of:
(a) dropping a developing solution on a semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 μm; and(b) reducing the film thickness of said developing solution film to 6 μm or less. |
地址 |
Tokyo JP |