| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a resistor material of high heat resistance having conductivity and alternative to a ruthenium oxide, as a resistor material used at 250-400°C, and to provide a resistor film and a manufacturing method therefor.SOLUTION: A resistor material contains, as a main component, a Mn oxide having a perovskite structure represented by (1+a)(AB)CMnO(where, -0.2≤a≤0.2, 0≤x<1.0, 0.5<y<1.0, A is one metal selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, B is at least one metal selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu excepting A, and C is at least one metal selected from Ba, Ca, and Sr).</p> |
