| 发明名称 |
SYSTEMS AND METHODS FOR DRY ETCHING A PHOTODETECTOR ARRAY |
| 摘要 |
Systems and methods for dry eteching a photodetector array based on InAsSb are provided. A method for fabricating an array of photodetectors includes receiving a pattern of an array of photodetectors formed from InAsSb, the pattern including at least one trench defined between adjacent photodetectors, and dry etching the at least one trench with a plasma including BrCl3 and Ar. |
| 申请公布号 |
US2014367822(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201313919541 |
申请日期 |
2013.06.17 |
| 申请人 |
The Boeing Company |
发明人 |
Delaunay Pierre-Yves |
| 分类号 |
H01L27/146;H01L21/66 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an array of photodetectors, said method comprising:
receiving a pattern of an array of photodetectors formed from InAsSb, the pattern including at least one trench defined between adjacent photodetectors; and dry etching the at least one trench with a plasma including BrCl3 and Ar. |
| 地址 |
Chicago IL US |
