PREPARING METHOD OF INORGANIC THIN FILM, AND APPARATUS THEREFOR
摘要
<p>The present invention relates to a method and apparatus for manufacturing an inorganic thin film. The method for manufacturing the inorganic thin film according to the embodiment of the present invention includes the steps of: alternatively processing a base material with plasma using a silicon source and a reactive gas; and forming the inorganic thin film on the base material by reacting the surface of the base material to the silicon source and the reactive gas. The silicon source includes a silicon precursor and an inert gas.</p>
申请公布号
KR101473464(B1)
申请公布日期
2014.12.18
申请号
KR20140097414
申请日期
2014.07.30
申请人
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
发明人
SEO, SANG JOON;CHO, SUNG MIN;YOO, JI BEOM;CHUNG, HO KYOON