| 摘要 |
A material of topmost layers (14b, 15b) of a source electrode (14) and a drain electrode (15) of an organic TFT (1) has a smaller work function difference between the material and a material of a semiconductor layer (16) than a work function difference between the material of the semiconductor layer and a material of layers (14a, 14b) other than the topmost layers. Upper surfaces and side surfaces of the topmost layers of the source electrode (14) and the drain electrode (15) are directly in contact with the semiconductor layer (16), and there is a second gate insulating layer (12) between the layers other than the topmost layers and the semiconductor layer (16). |
