EXTENDED GATE SENSOR FOR pH SENSING

摘要

A sensing device includes a substrate having a source region and a drain region formed therein. A gate structure is formed over the substrate and includes a gate dielectric and a gate conductor. The gate conductor is formed on the gate dielectric and disposed between the source region and the drain region. A dielectric layer is formed over the substrate and has a depth configured to form a well over the gate conductor. A gate extension is formed in contact with or as part of the gate conductor and including a conductive material covering one or more surfaces of the well.

主权项

1. A sensing device, comprising:
a substrate having a source region and a drain region formed therein; a gate structure formed over the substrate and including a gate dielectric and a gate conductor, the gate conductor being formed on the gate dielectric and disposed between the source region and the drain region; a dielectric layer formed over the substrate and having a depth configured to form a well over the gate conductor; and a gate extension formed in contact with or part of the gate conductor and including a conductive material exposed on one or more surfaces of the well.