SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP

摘要

A semiconductor substrate capable of detecting operating current of a MOSFET and diode current in a miniaturized MOSFET such as a trench-gate type MOSFET is provided. A semiconductor substrate includes a main current region and a current sensing region in which current smaller than main current flowing in the main current region flows. The main current region has a source electrode disposed on a main surface, the source electrode being in contact with a p-type semiconductor region (body) and an n+-type semiconductor region (source), and the current sensing region has a MOSFET current detecting electrode and a diode current detecting electrode on a main surface, the MOSFET current detecting electrode being in contact with the p-type semiconductor region (body) and the n+-type semiconductor region (source), the diode current detecting electrode being in contact with the p-type semiconductor region (body).

主权项

1. A semiconductor device in one package comprising:
a first switching device; a second switching device, the first switching device and the second switching device being connected in series between a voltage input terminal and a reference voltage terminal; and a driving circuit that complementarily drives the first switching device and the second switching device, wherein the second switching device is composed of the semiconductor substrate according to claim 1 and includes at least four pads, the four pads are composed of a pad for gate, a pad for source, a pad for detecting current, and a pad for detecting body diode current, the pad for gate, the pad for source, the pad for detecting current, the pad for detecting body diode current are connected to the first conductor, the second conductor, the third conductor, and the fourth conductor of the semiconductor substrate, respectively, and the driving device and the four pads are connected by bonding wires.