| 发明名称 |
INSULATED GATE BIPOLAR TRANSISTOR FAILURE MODE DETECTION AND PROTECTION SYSTEM AND METHOD |
| 摘要 |
An assembly including an insulated gate bipolar transistor (IGBT) is provided. The IGBT is coupled with a gate driver for receiving a gating signal to drive the IGBT and providing a feedback signal of the IGBT which indicates a change of a collector-emitter voltage of the IGBT. The assembly further includes a failure mode detection unit for determining whether the IGBT is faulted based on a timing sequence of the gating signal and feedback signal. The failure mode detection unit is capable of differentiating fault types including a gate driver fault, a failed turn-on fault, a short-circuit fault, a turn-on over-voltage fault and a turn-off over-voltage fault. Accordingly, an IGBT failure mode detection method is also provided. |
| 申请公布号 |
US2014368232(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201414284895 |
申请日期 |
2014.05.22 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
Wu Tao |
| 分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An assembly comprising:
an insulated gate bipolar transistor (IGBT), coupled with a gate driver for receiving a gating signal to drive the IGBT and providing a feedback signal of the IGBT which indicates a change of a collector-emitter voltage of the IGBT; and a failure mode detection unit for determining whether the IGBT is faulted and differentiating fault types including a gate driver fault, failed turn-on fault, a short-circuit fault, a turn-on over-voltage fault and a turn-off over-voltage fault, based on a timing sequence of the gating signal and the feedback signal. |
| 地址 |
Schenectady NY US |
