发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor and a manufacturing method thereof capable of enhancing reliability of electric characteristics and the thin film transistor, and to provide a display device and a manufacturing method thereof capable of improving image quality.SOLUTION: A thin film transistor comprises: a gate electrode; a gate insulating layer formed on the gate electrode; wiring formed on the gate insulating layer; an oxide semiconductor layer overlapping the gate electrode and formed on the gate insulating layer and the wiring; and an organic insulating layer brought into contact with the oxide semiconductor layer.</p> |
申请公布号 |
JP2014239245(A) |
申请公布日期 |
2014.12.18 |
申请号 |
JP20140150497 |
申请日期 |
2014.07.24 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;NODA KOSEI;SASAKI TOSHINARI;OHARA HIROKI;SAKATA JUNICHIRO |
分类号 |
H01L21/336;G02B5/20;G02F1/1368;G09G3/36;H01L29/786;H01L51/50;H05B33/12;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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