发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
摘要 A semiconductor memory device and a method of operating the same perform a program loop, including a program operation and a program verification operation based on a sub-verification voltage smaller than a target verification voltage and the target verification voltage, to the memory cells until a threshold voltage of the memory cells is greater than the target verification voltage. A positive voltage, supplied to the bit line of the memory cell of which the threshold voltage is higher than the sub-verification voltage, is increased whenever the program operation is performed, and thus a threshold voltage distribution of the memory cells may be improved.
申请公布号 US2014369134(A1) 申请公布日期 2014.12.18
申请号 US201314053174 申请日期 2013.10.14
申请人 SK hynix Inc. 发明人 BAIK Seung Hwan;CHO Gyu Seog
分类号 G11C16/34 主分类号 G11C16/34
代理机构 代理人
主权项 1. A semiconductor memory device comprising: memory cells; and a peripheral circuit suitable for performing a program loop, including a program operation and a program verification operation based on a sub-verification voltage, which is smaller than a target verification voltage, and the target verification voltage, to the memory cells until a threshold voltage of the memory cells is greater than the target verification voltage, wherein the peripheral circuit increases a positive voltage, supplied to a bit line of a memory cell of which a threshold voltage is higher than the sub-verification voltage, whenever the program operation is performed.
地址 Gyeonggi-do KR