发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME |
摘要 |
A semiconductor memory device and a method of operating the same perform a program loop, including a program operation and a program verification operation based on a sub-verification voltage smaller than a target verification voltage and the target verification voltage, to the memory cells until a threshold voltage of the memory cells is greater than the target verification voltage. A positive voltage, supplied to the bit line of the memory cell of which the threshold voltage is higher than the sub-verification voltage, is increased whenever the program operation is performed, and thus a threshold voltage distribution of the memory cells may be improved. |
申请公布号 |
US2014369134(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201314053174 |
申请日期 |
2013.10.14 |
申请人 |
SK hynix Inc. |
发明人 |
BAIK Seung Hwan;CHO Gyu Seog |
分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device comprising:
memory cells; and a peripheral circuit suitable for performing a program loop, including a program operation and a program verification operation based on a sub-verification voltage, which is smaller than a target verification voltage, and the target verification voltage, to the memory cells until a threshold voltage of the memory cells is greater than the target verification voltage, wherein the peripheral circuit increases a positive voltage, supplied to a bit line of a memory cell of which a threshold voltage is higher than the sub-verification voltage, whenever the program operation is performed. |
地址 |
Gyeonggi-do KR |