TRENCH HIGH ELECTRON MOBILITY TRANSISTOR DEVICE

摘要

A method for producing a solid state device, including forming a first dielectric layer over an epitaxial layer at least partially covering the a Silicon substrate and depositing a photoresist material thereover, removing a predetermined portion first dielectric layer to define an exposed portion, implanting dopants into the exposed portion to define a doped portion, preferentially removing Silicon from the exposed portion to generate trenches having V-shaped cross-sections and having first and second angled sidewalls defining the V-shaped cross-section, wherein each angled sidewall defining the V-shaped cross-section is a Silicon face having a 111 orientation, and forming a 2DEG on at least one sidewall.

主权项

1. A transistor device, comprising:
a crystalline silicon substrate member; a first substantially flat surface formed on the substrate member; a second oppositely disposed surface formed on the substrate member and spaced from the first surface; a third surface formed on the substrate member and extending from the first surface and following a 111 orientation plane; a source structure formed in the first surface; a gate structure formed in the first surface and spaced from the source structure; a drain structure formed on the second surface; a dielectric layer formed on the first surface; a p-well formed in the first surface and positioned between the gate structure and the source structure; wherein the dielectric layer is between about 10 microns thick and about 200 microns thick; and wherein the third surface hosts a 2-dimensional electron gas.