| 摘要 |
Disclosed is a Cu-Ga alloy sputtering target which enables the formation of a Cu-Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu-Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 µm or less, and has a porosity of 0.1% or less. |
