| 摘要 |
PROBLEM TO BE SOLVED: To suppress a leak current caused by an etch pit formed on a surface part of an epitaxial layer in a manufacturing step.SOLUTION: A method for manufacturing a diode comprises: a cap layer formation step (S3) of forming a cap layer on a surface of an epitaxial layer; an annealing step (S4) of activating a dopant with the cap layer being formed; a cap layer removal step (S5) of removing the cap layer; a cleaning step (S6) of cleaning the surface of the epitaxial layer using an etching technique; a step (S7) of forming a second epitaxial layer on the surface of the epitaxial layer through crystal growth; and a polishing step (S8) of polishing the second epitaxial layer formed on the surface of the epitaxial layer. |
