发明名称 |
INSULATING GATE-TYPE BIPOLAR TRANSISTOR |
摘要 |
<p>An object of the present invention is to provide a trench gate type IGBT achieving both retention of withstand voltage and lowering of ON-state voltage and to provide a method for manufacturing the trench gate type IGBT. The IGBT according to the present invention is an SJ-RC-IGBT which includes a drift layer having super junction structure, and includes an IGBT area and an FWD area on the rear surface. In the IGBT according to the present invention, a first drift layer has an impurity concentration of 1×1015 atms/cm3 or higher and lower than 2×1016 atms/cm3, and a thickness of 10μm or larger and smaller than 50μm; and that a buffer layer has an impurity concentration of 1×1015 atms/cm3 or higher and lower than 2×1016 atms/cm3, and a thickness of 2μm or larger and smaller than 15μm.</p> |
申请公布号 |
KR20140143826(A) |
申请公布日期 |
2014.12.17 |
申请号 |
KR20147031076 |
申请日期 |
2012.05.29 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
AONO SHINJI;MINATO TADAHARU |
分类号 |
H01L29/78;H01L27/04;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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