发明名称 |
PROCESS OF PREPARING AN ELECTRICAL ISOLATION FILM AND APPLICATION FOR THE METALLISATION OF THROUGH VIAS |
摘要 |
The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate. According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometers, and preferably between 80 and 500 nanometers. Application: Metallization of through-vias, especially of 3D integrated circuits. |
申请公布号 |
EP2324085(B1) |
申请公布日期 |
2014.12.17 |
申请号 |
EP20090772736 |
申请日期 |
2009.07.01 |
申请人 |
ALCHIMER |
发明人 |
MEVELLEC, VINCENT;GONZALEZ, JOSÉ;SUHR, DOMINIQUE |
分类号 |
C25D13/18;C25D7/12;H01L21/312;H01L21/768 |
主分类号 |
C25D13/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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