Scalable multi-functional and multi-level nano-crystal non-volatile memory device

摘要

A memory cell including a tunnel insulator comprising a plurality of materials, a control gate, a charge blocking material between the tunnel insulator and the control gate, and a discrete trapping material embedded in one of the tunnel insulator or the charge blocking layer.

主权项

1. A memory cell comprising:
a tunnel insulator comprising a plurality of materials wherein a first tunnel insulator material comprises HfO2 and a second tunnel insulator material comprises LaAlO3; a control gate; a charge blocking material between the tunnel insulator and the control gate; and a discrete charge trapping material embedded at an interface of the first tunnel insulator material and the second tunnel insulator material, or at an interface of the second tunnel insulator material and the charge blocking material.