| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device has a gate electrode including a leg part and a canopy part. A barrier layer is formed on a bottom face of the leg part of the gate electrode. In addition, on the lower surface of the barrier layer, a Schottky metal layer with an electrode width wider than the electrode width of the barrier layer is formed to have a Schottky junction with a semiconductor layer. | ||
| 申请公布号 | US8912084(B2) | 申请公布日期 | 2014.12.16 |
| 申请号 | US201313773330 | 申请日期 | 2013.02.21 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Sasaki Fumio |
| 分类号 | H01L21/28;H01L29/68;H01L21/285;H01L29/423;H01L29/47;H01L29/66;H01L29/778 | 主分类号 | H01L21/28 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor layer; a drain electrode and a source electrode formed in mutually separated positions on a surface of the semiconductor layer and respectively make ohmic contact with the semiconductor layer; and a gate electrode comprising a leg part and a canopy part provided on top of the leg part and having a width wider than that of the leg part, the gate electrode further comprising a barrier layer formed on the bottom face of the leg part and a Schottky metal layer that is in contact with a lower surface of the barrier layer and forms a Schottky junction with the semiconductor layer, wherein the Schottky metal layer that forms the Schottky junction is wider than the barrier layer formed on the bottom face of the leg part, and the gate electrode is Y-shaped. | ||
| 地址 | Tokyo JP | ||