Semiconductor device and manufacturing method thereof

摘要

A device that may be used for a phase change random access memory in a semiconductor device and a manufacturing method thereof are provided. The device includes a phase change unit and two sidewall electrodes respectively located on two opposite sidewalls of the phase change unit. The phase change unit includes a three layer structure, in which a phase change material layer is positioned between a top insulating material layer and a bottom insulating material layer. The first sidewall electrode and the second sidewall electrode are in contact with two opposite end faces of the phase change material layer. The contact area between electrode and phase change material is reduced, thereby obtaining a relatively small drive current and meeting a demand that the integrated level of such a device is increasingly enhanced.

主权项

1. A device comprising:
a phase change unit that includes a top insulating material layer, a bottom insulating material layer and a phase change material layer positioned between the top insulating material layer and the bottom insulating material layer; a first sidewall electrode and a second sidewall electrode which are respectively located on two opposite sidewalls of the phase change unit and respectively in contact with two opposite end faces of the phase change material layer, a first insulating material layer under the phase change unit; a first conductive plug that penetrates through the first insulating material layer and is electrically connected to the first sidewall electrode; and a second insulating material layer located over the first insulating material layer and flush with a top surface of the phase change unit.