Semiconductor memory device and method of operating the same

摘要

A semiconductor memory device of the present invention includes a memory cell array with cell strings having word lines stacked on a substrate and a vertical channel layer formed through the word lines, a peripheral circuit configured to select one of the word lines and perform a program operation on the selected word line, and a control circuit configured to control the peripheral circuit to perform the program operation by applying a program voltage to a word line selected for the program operation, applying a ground voltage to a word line of which a program operation has been completed and applying a pass voltage to the other word lines.

主权项

1. A semiconductor memory device comprising:
a memory cell array with cell strings having word lines stacked on a substrate and a vertical channel formed through the word lines; a peripheral circuit configured to select one of the word lines and perform a program operation on the selected word line; and a control circuit configured to control the peripheral circuit to perform the program operation by applying a ground voltage to a first group of word lines coupled to memory cells of which a program operation has been completed, applying a pass voltage to a second group of word lines coupled to memory cells of which a program operation has not been completed, and applying a program voltage to the selected word line coupled to selected memory cells.