SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To relax concentration of an electric field generated at a bottom of a trench in a semiconductor device having a trench.SOLUTION: A semiconductor device 10 comprises: a first semiconductor layer 120 which is a semiconductor of a first conductivity type; and a second semiconductor layer 130 which is in contact with the first semiconductor layer 120 and is a semiconductor of a second conductivity type. A trench 250 is formed in the second semiconductor layer 130 so as to reach the first semiconductor layer 120. A bottom 252 of the trench 250 is formed in a protrusion shape in a direction from the first semiconductor layer 120 toward the second semiconductor layer 130. The semiconductor device has a region 330 formed of a semiconductor of the second conductivity type between the bottom 252 and a surface including a boundary 125 between the first semiconductor layer 120 and the second semiconductor layer 130.