| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can prevent oxidization of a Ni-containing electrode to avoid deterioration in wettability with a solder and achieve good electrical contact between a semiconductor substrate and the electrode at low cost.SOLUTION: A semiconductor device 1 according to the present embodiment comprises: a semiconductor substrate 2; and a back electrode 4 formed by sequentially laminating a first metal electrode 41, a second metal electrode 42 and a third metal electrode 43 on the semiconductor substrate 2. The first metal electrode 41 is Ti or a Ti alloy, and the second metal electrode 42 is Ni or a Ni alloy, and the third metal electrode 43 is an alloy of Ag and at least one among Pd, Ni, Cu, Mg, Zn, Nd, Sn and Bi. |
