SILICON-BASED SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon-based substrate capable of favorably maintaining crystallinity of a nitride-based compound semiconductor layer formed on an upper layer while improving warpage of the substrate.SOLUTION: A silicon-base substrate for forming a nitride-based compound semiconductor layer on a surface thereof includes: a first part on a surface side having a first impurity concentration; and a second part having a second impurity concentration higher than the first impurity concentration and being on an inner side than the first part. The first impurity concentration is 1×10atoms/cmor more and less than 1×10atoms/cm.