发明名称 METHOD OF MAKING A PILLAR STRUCTURE HAVING A NON-METAL SIDEWALL PROTECTION STRUCTURE
摘要 A method of making a pillar structure includes forming a first under-bump-metallurgy (UBM) layer formed on a pad region of a substrate, wherein the first UBM layer includes sidewalls. The method further includes forming a second UBM layer on the first UBM layer, wherein the second UBM layer includes a sidewall surface, an area of the first UBM layer is greater than an area of the second UBM layer. The method further includes forming a copper-containing pillar on the second UBM layer, wherein the copper-containing pillar includes a sidewall surface and a top surface. The method further includes forming a protection structure on the sidewall surface of the copper-containing pillar and on an entirety of the sidewall surface of the second UBM layer, wherein the protection structure does not cover the sidewalls of the first UBM layer, and the protection structure is a non-metal material.
申请公布号 US2014363970(A1) 申请公布日期 2014.12.11
申请号 US201414465962 申请日期 2014.08.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HWANG Chien Ling;WU Yi-Wen;WANG Chun-Chieh;LIU Chung-Shi
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method of making a pillar structure, the method comprising: forming a first under-bump-metallurgy (UBM) layer formed on a pad region of a substrate, wherein the first UBM layer includes sidewalls; forming a second UBM layer on the first UBM layer, wherein the second UBM layer includes a sidewall surface, an area of the first UBM layer is greater than an area of the second UBM layer; forming a copper-containing pillar on the second UBM layer, wherein the copper-containing pillar includes a sidewall surface and a top surface; and forming a protection structure on the sidewall surface of the copper-containing pillar and on an entirety of the sidewall surface of the second UBM layer, wherein the protection structure does not cover the sidewalls of the first UBM layer, and the protection structure is a non-metal material.
地址 Hsinchu TW