DEVICE INCLUDING A TRANSISTOR HAVING A STRESSED CHANNEL REGION AND METHOD FOR THE FORMATION THEREOF

摘要

A device includes a substrate, a P-channel transistor and an N-channel transistor. The substrate includes a first layer of a first semiconductor material and a second layer of a second semiconductor material. The first and second semiconductor materials have different crystal lattice constants. The P-channel transistor includes a channel region having a compressive stress in a first portion of the substrate. The channel region of the P-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. The N-channel transistor includes a channel region having a tensile stress formed in a second portion of the substrate. The channel region of the N-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. Methods of forming the device are also disclosed.

主权项

1. A device, comprising:
a substrate, said substrate comprising a first layer of a first semiconductor material and a second layer of a second semiconductor material, wherein said second layer is provided on said first layer, and said first and second semiconductor materials have different crystal lattice constants; a P-channel transistor comprising a channel region having a compressive stress provided in a first portion of said substrate, said channel region of said P-channel transistor comprising a portion of said first layer of said first semiconductor material and a portion of said second layer of said second semiconductor material; and an N-channel transistor comprising a channel region having a tensile stress formed in a second portion of said substrate, said channel region of said N-channel transistor comprising a portion of said first layer of said first semiconductor material and a portion of said second layer of said second semiconductor material.