| 发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME |
| 摘要 |
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is over the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located at an interface of the first III-V compound layer and the second III-V compound layer. A dielectric cap layer is over the second III-V compound layer and a protection layer is over the dielectric cap layer. Slanted field plates are in a combined opening in the dielectric cap layer and protection layer. |
| 申请公布号 |
US2014361310(A1) |
申请公布日期 |
2014.12.11 |
| 申请号 |
US201414465250 |
申请日期 |
2014.08.21 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU Chen-Ju;YAO Fu-Wei;HSU Chun-Wei;YU Jiun-Lei Jerry;YANG Fu-Chih;HSIUNG Chih-Wen |
| 分类号 |
H01L29/778;H01L29/66;H01L29/06 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
a first III-V compound layer; a second III-V compound layer over the first III-V compound layer and different from the first III-V compound layer in composition, wherein a carrier channel is located at an interface of the first III-V compound layer and the second III-V compound layer; a dielectric cap layer over the second III-V compound layer; a protection layer over the dielectric cap layer; a combined opening in the dielectric cap layer and the protection layer; and slanted field plates in the combined opening. |
| 地址 |
Hsinchu TW |
