| 主权项 |
1. A resin-sealed semiconductor device comprising:
a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a glass composition for protecting a semiconductor junction such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction, wherein the glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO2, Al2O3, B2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, BaO and MgO, contents of the respective components being set as described below, substantially contains none of Pb, As, Sb, Li, Na and K, and contains none of the components of the raw material as a filler. the content of SiO2: 49.5 mol % to 64.3 mol % the content of Al2O3: 3.7 mol % to 14.8 mol % the content of B2O3: 8.4 mol % to 17.9 mol % the content of ZnO 3.9 mol % to 14.2 mol % the content of oxides of alkaline earth metals: 7.4 mol % to 12.9 mol % |
