发明名称 |
ACTIVE REGION INCLUDING NANODOTS (REFERRED TO ALSO AS QUANTUM DOTS) IN MATRIX CRYSTAL GROWN ON SI SUBSTRATE AND CONSTITUTED OF ZINCBLENDE (REFERRED TO ALSO AS CUBIC) ALYINXGA1-Y-XN CRYSTAL (Y≥0, X>0), AND LIGHT-EMITTING DEVICE (LED AND LD) OBTAINED USING SAME |
摘要 |
[Problem] To provide the structure of a high-luminance light-emitting device (LED) or high-luminance LD. [Solution] The present invention provides an LED characterized by including both AlyInxGazN crystals (y≥0, x>0) as matrix crystals which retain a zincblende crystal structure and In dots which have a higher In concentration than the AlyInxGazN crystals (y≥0, x>0) as matrix crystals, the matrix crystals and the In dots having been disposed over a zincblende BP crystal layer formed on an Si substrate. |
申请公布号 |
WO2014196471(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
WO2014JP64448 |
申请日期 |
2014.05.30 |
申请人 |
NITTO OPTICAL CO., LTD;SOLARTES LAB., LTD |
发明人 |
TERASHIMA KAZUTAKA;NISHIMURA SUZUKA;HIRAI MUNEYUKI |
分类号 |
H01S5/343;H01L33/06;H01L33/32 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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