MANUFACTURING METHOD OF HIGH-PURITY CHLOROPOLYSILANE

摘要

[Problem] Chloropolysilane having a low metallic impurity concentration has been required to be obtained in order to be used for semiconductor applications. However, it is difficult by distillation to remove impurities such as a titanium compound having a vapor pressure close to that of chloropolysilane and an aluminum compound having a sublimating property. Meanwhile, when the content of metallic impurities such as aluminum and titanium reduces in metallic silicon that is a raw material, chlorination reaction is less likely to occur unless a reaction temperature is raised and that causes equipment to be restricted. It is found that a chlorination reaction can be carried out at a relatively low temperature by heating a mixture of granular metallic silicon and metallic copper or a copper compound in an inert atmosphere even when the metallic silicon has a high purity and does not contain aluminum and titanium and that chloropolysilane of high purity can be obtained by further adding metallic silicon as needed after the chlorination reaction is started.

主权项

1. A manufacturing method of chloropolysilane represented by Formula 1, comprising:
a first process of producing an activated copper catalyst from metallic silicon and metallic copper or a copper compound, wherein an amount of metallic elements other than silicon contained in the metallic silicon is 2% by mass or smaller with respect to a total mass of the metallic silicon, and among the metallic elements other than silicon, amounts of Al and Ti are 0.5% or smaller and 0.1% or smaller by mass, respectively, with respect to the total mass of the metallic silicon; and a second process of conducting chlorination reaction of metallic silicon under the existence of the activated copper catalyst;
SinCl2n+2  Formula 1,(where, n in Formula 1 is an integer of 2 or more).