发明名称 ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME, IMAGE SENSOR HAVING ISOLATION STRUCTURE
摘要 <p>The present technology relates to a device isolation structure capable of separating a plurality of device regions and preventing interference between adjacent device regions. Provided is the device isolation structure which includes a first device isolation part which includes an insulation layer to gap-fill a trench which is formed on a substrate and a second device isolation part which includes a first impurity region which is formed on the substrate and a second impurity region which is formed along the edge of the first impurity region and has a doping concentration which is larger than the doping concentration of the first impurity region. Wherein, the first device isolation part and the second device isolation part are stacked.</p>
申请公布号 KR20140141822(A) 申请公布日期 2014.12.11
申请号 KR20130062477 申请日期 2013.05.31
申请人 SK HYNIX INC. 发明人 CHOI, CHUNG SEOK;MOON, JANG WON;KIM, JONG CHAE;KIM, DO HWAN
分类号 H01L27/146;H01L21/762 主分类号 H01L27/146
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