发明名称 |
ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME, IMAGE SENSOR HAVING ISOLATION STRUCTURE |
摘要 |
<p>The present technology relates to a device isolation structure capable of separating a plurality of device regions and preventing interference between adjacent device regions. Provided is the device isolation structure which includes a first device isolation part which includes an insulation layer to gap-fill a trench which is formed on a substrate and a second device isolation part which includes a first impurity region which is formed on the substrate and a second impurity region which is formed along the edge of the first impurity region and has a doping concentration which is larger than the doping concentration of the first impurity region. Wherein, the first device isolation part and the second device isolation part are stacked.</p> |
申请公布号 |
KR20140141822(A) |
申请公布日期 |
2014.12.11 |
申请号 |
KR20130062477 |
申请日期 |
2013.05.31 |
申请人 |
SK HYNIX INC. |
发明人 |
CHOI, CHUNG SEOK;MOON, JANG WON;KIM, JONG CHAE;KIM, DO HWAN |
分类号 |
H01L27/146;H01L21/762 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|