发明名称 TABLET FOR VAPOR DEPOSITION AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a tablet for vapor deposition that is made of a non-doped indium oxide sintered body and hardly broken even when irradiated with a high-power electron beam or high-output plasma, and a manufacturing method therefor.SOLUTION: A tablet for vapor deposition is made of a non-doped indium oxide sintered body manufactured by burning mixed powder of calcinated indium oxide powder (first raw material powder) and uncalcinated indium oxide powder (second raw material powder), and has a relative density of 50-70 thereof. The particle diameter ratio [(D2/D1)×100(%)] of a mean particle diameter D2 of second sintered particles to a mean particle diameter D1 of first sintered particles is 3-15%, where D1 represents the mean particle diameter of the first sintered particles constituting the indium oxide sintered body and originating from the first raw material powder, and D2 represents the mean particle diameter of the second sintered particles constituting the indium oxide sintered body and originating from the second raw material powder.
申请公布号 JP2014231625(A) 申请公布日期 2014.12.11
申请号 JP20130112633 申请日期 2013.05.29
申请人 SUMITOMO METAL MINING CO LTD 发明人 OZAWA MAKOTO;SATO KEIICHI
分类号 C23C14/24;C04B35/00 主分类号 C23C14/24
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