发明名称 UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS
摘要 In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.
申请公布号 US2014363956(A1) 申请公布日期 2014.12.11
申请号 US201414296119 申请日期 2014.06.04
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 Hatakeyama Jun;Kori Daisuke;Ogihara Tsutomu
分类号 H01L21/027;H01L21/266;C08G8/04 主分类号 H01L21/027
代理机构 代理人
主权项 1. A photoresist underlayer film-forming composition for use in lithography, comprising a novolak resin comprising recurring units having the general formula (1):wherein R1 is hydrogen, an acid labile group, glycidyl group, or a straight, branched or cyclic C1-C10 alkyl, acyl or alkoxycarbonyl, R2 is hydrogen, or a straight, branched or cyclic C1-C10 alkyl, C2-C10 alkenyl, or C6-C10 aryl group, which may have a hydroxyl, alkoxy, acyloxy, ether, sulfide or halogen moiety, or a halogen atom, hydroxyl, acyl, carboxyl, acyloxy, alkoxycarbonyl, cyano or C1-C4 alkoxy group, R3 is hydrogen, or a straight, branched or cyclic C1-C6 alkyl, a straight, branched or cyclic C2-C10 alkenyl, or C6-C12 aryl group, which may have a hydroxyl, alkoxy, ether, thioether, carboxyl, alkoxycarbonyl, acyloxy, —COOR or —OR moiety, wherein R is a lactone ring, acid labile group, or —R′—COOR″, wherein R′ is a single bond or alkylene group, and R″ is an acid labile group, X is methylene, ethylene, ethynylene, —S— or —NH—, each of m and n is 1 or 2.
地址 Tokyo JP